结晶等（结晶构造、材料样品） - 版本历史

Li.qun：/* 47-1. dislocation */

2018-04-16T02:10:37Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:09:12Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:07:53Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:07:14Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:06:52Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:05:15Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:03:48Z

‎47-1. dislocation

Li.qun：/* 47-1. dislocation */

2018-04-16T02:02:11Z

‎47-1. dislocation

Li.qun：/* 25. GP zone */

2017-05-16T03:13:21Z

‎25. GP zone

Li.qun：/* 9-4. inversion domain boundary */

2017-05-04T07:46:17Z

‎9-4. inversion domain boundary

@@ 第255行： / 第255行： @@
 *[[文件:Dislocation 01.png]]
 Fig. 1.(a) Schematic of edge dislocation. (b) Schematic of screw dislocation.
-[[文件:Dislocation 02.png]]
+*[[文件:Dislocation 02.png]]
 Fig. 2. Bright-field image of dislocations in a silicon crystal taken at an accelerating voltage of 200 kV.
 (a) A black line (indicated by arrow "a") shows a dislocation line running parallel to the specimen surface.
 (b) A black zigzag line (indicated by arrow "b") exhibits a dislocation running oblique to the specimen surface. The zigzag contrast is created by a dynamical diffraction effect.
+*[[文件:Dislocation 03.png]]
 Fig. 3
 (a) [001] atomic-resolution dark-field STEM image of dislocations on a small-angle grain boundary of SrTiO3 taken at an accelerating voltage of 200 kV. (Specimen courtesy: Prof. Y. Ikuhara, The University of Tokyo)

@@ 第255行： / 第255行： @@
 *[[文件:Dislocation 01.png]]
 Fig. 1.(a) Schematic of edge dislocation. (b) Schematic of screw dislocation.
+[[文件:Dislocation 02.png]]
 Fig. 2. Bright-field image of dislocations in a silicon crystal taken at an accelerating voltage of 200 kV.
 (a) A black line (indicated by arrow "a") shows a dislocation line running parallel to the specimen surface.

@@ 第253行： / 第253行： @@
 Fig. 1(b) schematically shows the atomic arrangement near a screw dislocation. The screw dislocation (line) exists at the start (or end) line of the displacement and runs from the top to the bottom of the figure. The Burgers circuit in this case is seen to be spiral. The Burgers vector of the screw dislocation is parallel to the dislocation line (indicated by a red allow).
 Fig. 2 shows a bright-field image of dislocations in a silicon crystal. The dislocations (lines) are seen to be dark (black) lines because the regions near the dislocations come into a Bragg reflection. Fig. 3 shows a [001] atomic-resolution dark-field STEM image of a small-angle grain boundary of SrTiO3. Edge dislocations are seen to be arranged along the grain boundary, creating a small orientation change between both sides of the crystal.Related term.
+*[[文件:Dislocation 01.png]]
 Fig. 1.(a) Schematic of edge dislocation. (b) Schematic of screw dislocation.

@@ 第253行： / 第253行： @@
 Fig. 1(b) schematically shows the atomic arrangement near a screw dislocation. The screw dislocation (line) exists at the start (or end) line of the displacement and runs from the top to the bottom of the figure. The Burgers circuit in this case is seen to be spiral. The Burgers vector of the screw dislocation is parallel to the dislocation line (indicated by a red allow).
 Fig. 2 shows a bright-field image of dislocations in a silicon crystal. The dislocations (lines) are seen to be dark (black) lines because the regions near the dislocations come into a Bragg reflection. Fig. 3 shows a [001] atomic-resolution dark-field STEM image of a small-angle grain boundary of SrTiO3. Edge dislocations are seen to be arranged along the grain boundary, creating a small orientation change between both sides of the crystal.Related term.
 [[文件:Dislocation 01.png]]
 Fig. 1.(a) Schematic of edge dislocation. (b) Schematic of screw dislocation.

@@ 第253行： / 第253行： @@
 Fig. 1(b) schematically shows the atomic arrangement near a screw dislocation. The screw dislocation (line) exists at the start (or end) line of the displacement and runs from the top to the bottom of the figure. The Burgers circuit in this case is seen to be spiral. The Burgers vector of the screw dislocation is parallel to the dislocation line (indicated by a red allow).
 Fig. 2 shows a bright-field image of dislocations in a silicon crystal. The dislocations (lines) are seen to be dark (black) lines because the regions near the dislocations come into a Bragg reflection. Fig. 3 shows a [001] atomic-resolution dark-field STEM image of a small-angle grain boundary of SrTiO3. Edge dislocations are seen to be arranged along the grain boundary, creating a small orientation change between both sides of the crystal.Related term.
-[[文件：Dislocation 01.png]]
+[[文件:Dislocation 01.png]]
 Fig. 1.(a) Schematic of edge dislocation. (b) Schematic of screw dislocation.

@@ 第249行： / 第249行： @@
 ==47. dislocation ==
 ===47-1. dislocation===
-"Dislocation" is a kind of lattice defect. When a certain region in a crystal undergoes a slip (a displacement), a boundary between the slipped region and the non-slipped region is called a dislocation or a dislocation line. Dislocation includes screw dislocation and edge dislocation. In the case of the screw dislocation, when a round circuit is taken along the crystal lattice (Burgers circuit) around the dislocation (line), the end of the circuit after one round does not get back to the original lattice point but comes to the next lattice point in the direction of the dislocation line. This displacement is termed the Burgers vector which characterizes the dislocation. In edge dislocation, one extra lattice plane (extra half plane) is introduced in the half way of a crystal. The edge line of the extra half plane is the edge dislocation or edge dislocation line. The Burgers vector of the edge dislocation is perpendicular to the dislocation line. Plasticity of a crystal is explained by dislocation motion and multiplication of dislocations.
+"Dislocation" is a linear or one dimensional defect in a crystal. When a part in a crystal is displaced against the other part, the line at which the displacement is starting is called a dislocation or a dislocation line. There are two types of dislocations, or edge dislocations and screw dislocations. The crystal around the dislocation is highly strained. Plasticity of a crystal is explained by motion and multiplication of dislocations.
 <pre>Related term
 lattice defect, weak-beam method, partial dislocation, stacking fault</pre>
 ===47-2. dislocation loop===
 When oversaturated point defects (vacancies or interstitials) accumulate in a plate form, a closed dislocation is produced at the edge of the plate. The closed dislocation is called "dislocation loop." In the case of the vacancy plate, when the atomic planes neighboring to the vacancy plate collapse to retrieve the inherent atomic distance, a stacking fault is produced. Whether the dislocation loop is the vacancy type or the interstitial type is determined by examining whether the dislocation image is formed inside or outside of the dislocation for the diffraction conditions of the positive and negative deviations from the Bragg condition.

@@ 第137行： / 第137行： @@
 ==25. GP zone ==
 "GP zone" means a plate that is composed of solute atoms segregated on a plane. The zone was discovered independently by A. Guinier and G. D. Preston through the analysis of streaks extending from X-ray Laue spots. It is named Guinier-Preston (GP) Zone after the two researchers. In the case of an age-hardened alloy that consists of Al or Mg but includes minute solute atoms (Cu, etc.), when its super-saturated solid solution is rapidly cooled and undergoes an aging treatment at a low temperature, solute atoms (Cu, etc.) are precipitated as one or two atomic planes with lattice matching on the {001} plane of the parent phase. It is noted that they do not appear as precipitates in the equilibrium state. The GP zone causes age hardening of alloys containing Al or Mg. In a bright-field image, the GP zone shows a line contrast due to lattice distortions. In a high-resolution image, the arrangement of solute atoms is directly observed.
 ==26. magnetic domain ==
 A "magnetic domain" means a region where the directions of all the magnetizations of respective atoms are the same.

@@ 第49行： / 第49行： @@
 ===9-4.	inversion domain boundary===
 "Inversion domain boundary" separates two adjacent crystals which coincide with each other by an inversion operation.
-<pre>elated term
+<pre>Related term
 boundary</pre>
 ===9-5. anti-phase boundary ===
 "Anti-phase boundary" separates two adjacent crystals which have the same crystallographic orientation but have a 180°phase shift (a shift of half period) each other. Anti-phase boundaries frequently appear in the ordered phase of a binary alloy.